4.5 Article

Pentacene crystal formation on the surface of silk fibroin films

期刊

FIBERS AND POLYMERS
卷 14, 期 12, 页码 2006-2009

出版社

KOREAN FIBER SOC
DOI: 10.1007/s12221-013-2006-2

关键词

Silk fibroin; Crystallization; Gate dielectric; Dielectric property; Pentacene

资金

  1. Fundamental R&D Program for Core Technology of Materials [10041220]
  2. Ministry of Knowledge Economy, Republic of Korea
  3. Basic Science Research Program through the National Research Foundation of Korea (NRF)
  4. Ministry of Education [NRF-2013R1A1A2A10008534]
  5. Korea Evaluation Institute of Industrial Technology (KEIT) [10041220] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

向作者/读者索取更多资源

Silk fibroin (SF) has attracted interest as a gate dielectric due to its electrical insulation and high mobility in pentacene based organic thin film transistors (OTFTs). In this research, the surface energy of SF is controlled by water annealing, ethanol, and methanol solution treatments in order to study the effect of pentacene morphology on SF thin films with various treatments. For different crystallization methods, the crystal structures and surface energies of SF were investigated in detail by FT-IR and contact angle. Methanol treated SF thin film has a lower surface energy than the other two thin films. Topologies of pentacene on the SF thin films with various surface energies were obtained by atomic force microscopy (AFM). The AFM results showed that the smallest grain size of pentacene was that on methanol treated SF thin film which demonstrated that methanol treated SF thin film can be a proper candidate for a gate dielectric in OTFTs.

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