期刊
EUROPEAN PHYSICAL JOURNAL-SPECIAL TOPICS
卷 172, 期 -, 页码 311-321出版社
EDP SCIENCES S A
DOI: 10.1140/epjst/e2009-01056-0
关键词
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资金
- Finnish Academy of Science and Letters, Vilho, Yrjo
- Kalle Vaisala Foundation
- Technology Industries of Finland Centennial Foundation
- Academy of Finland
We discuss the operation of the superconductor-insulator-normal-metal-insulator-superconductor (SINIS) turnstile. This voltage-biased hybrid single-electron transistor (SET) provides current quantization even with only one radio-frequency (rf) control parameter, namely the gate voltage of the single island. We give an overview of the main error mechanisms of the turnstile and consider its feasibility as a quantum current standard. We also present experimental results of pumping with the SINIS structure which show decreased leakage current compared to earlier measurements with the opposite NISIN structure.
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