标题
1/f noise in graphene
作者
关键词
Mesoscopic and Nanoscale Systems
出版物
EUROPEAN PHYSICAL JOURNAL B
Volume 86, Issue 9, Pages -
出版商
Springer Nature
发表日期
2013-09-07
DOI
10.1140/epjb/e2013-40571-7
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Improving the intrinsic cut-off frequency of gate-all-around quantum-wire transistors without channel length scaling
- (2013) A. Benali et al. APPLIED PHYSICS LETTERS
- Reduction of 1/f noise in graphene after electron-beam irradiation
- (2013) Md. Zahid Hossain et al. APPLIED PHYSICS LETTERS
- Tuning Electronic Structure of Graphene: A First-Principles Study
- (2012) V. J. Surya et al. IEEE TRANSACTIONS ON NANOTECHNOLOGY
- Impurities as a source of1/fnoise in graphene
- (2012) A. A. Kaverzin et al. PHYSICAL REVIEW B
- Energy spectrum and quantum Hall effect in twisted bilayer graphene
- (2012) Pilkyung Moon et al. PHYSICAL REVIEW B
- Microscopic Mechanism of 1/f Noise in Graphene: Role of Energy Band Dispersion
- (2011) Atindra Nath Pal et al. ACS Nano
- Mobility-Dependent Low-Frequency Noise in Graphene Field-Effect Transistors
- (2011) Yan Zhang et al. ACS Nano
- Low-Frequency Current Fluctuations in “Graphene-like” Exfoliated Thin-Films of Bismuth Selenide Topological Insulators
- (2011) Md. Zahid Hossain et al. ACS Nano
- Armchair graphene nanoribbons:PT-symmetry breaking and exceptional points without dissipation
- (2011) Maurizio Fagotti et al. PHYSICAL REVIEW B
- Large low-frequency resistance noise in chemical vapor deposited graphene
- (2010) Atindra Nath Pal et al. APPLIED PHYSICS LETTERS
- Electrical and noise characteristics of graphene field-effect transistors: ambient effects, noise sources and physical mechanisms
- (2010) S Rumyantsev et al. JOURNAL OF PHYSICS-CONDENSED MATTER
- Effect of Spatial Charge Inhomogeneity on 1/fNoise Behavior in Graphene
- (2010) Guangyu Xu et al. NANO LETTERS
- Charge Noise in Graphene Transistors
- (2010) Iddo Heller et al. NANO LETTERS
- The birth of topological insulators
- (2010) Joel E. Moore NATURE
- Simulation of hydrogenated graphene field-effect transistors through a multiscale approach
- (2010) G. Fiori et al. PHYSICAL REVIEW B
- Ultralow noise field-effect transistor from multilayer graphene
- (2009) Atindra Nath Pal et al. APPLIED PHYSICS LETTERS
- Flicker Noise in Bilayer Graphene Transistors
- (2009) Qinghui Shao et al. IEEE ELECTRON DEVICE LETTERS
- Carrier scattering, mobilities, and electrostatic potential in monolayer, bilayer, and trilayer graphene
- (2009) Wenjuan Zhu et al. PHYSICAL REVIEW B
- Electronic properties of armchair graphene nanoribbons
- (2009) A. V. Rozhkov et al. PHYSICAL REVIEW B
- Resistance Noise in Electrically Biased Bilayer Graphene
- (2009) Atindra Nath Pal et al. PHYSICAL REVIEW LETTERS
- Strong Suppression of Electrical Noise in Bilayer Graphene Nanodevices
- (2008) Yu-Ming Lin et al. NANO LETTERS
- Ab initiostudy of polarizability and induced charge densities in multilayer graphene films
- (2008) E. K. Yu et al. PHYSICAL REVIEW B
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