4.6 Article

Top-grid monolayer graphene/Si Schottkey solar cell

期刊

JOURNAL OF SOLID STATE CHEMISTRY
卷 224, 期 -, 页码 102-106

出版社

ACADEMIC PRESS INC ELSEVIER SCIENCE
DOI: 10.1016/j.jssc.2014.08.025

关键词

Graphene; Silicon; Schottkey solar cell; Doping

资金

  1. National High Technology Research and Development Program of China (863 Program) [2013AA031903]
  2. National Natural Science Foundation of China [51222208, 51290273]
  3. Doctoral Fund of Ministry of Education of China [20123201120026]
  4. ARC DECRA [DE120101569]
  5. DP [DP140101501]

向作者/读者索取更多资源

Monolayer graphene/Si Schottkey solar cell was fabricated using a top-grid structure. In comparison with the prevailing top-window structure, the newly-designed device structure has simplified the fabrication procedures to avoid ultraviolet (UV) photolithography and SiO2-eching. We systematically investigated the effect of chemical doping as well as device area on the device performance. It was found that a power conversion efficiency (PCE) of 5.9% can be achieved by engineering the work function of graphene through chemical doping. Our study indicates that top grid structure is suitable to make low-cost, large area and high efficiency graphene/Si Schottkey solar cell. (C) 2014 Elsevier Inc. All rights reserved.

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