Article
Chemistry, Inorganic & Nuclear
Wei-Hong Liu, Wei Zeng, Fu-Sheng Liu, Bin Tang, Qi-Jun Liu, Xiao-Juan Ma
Summary: This article uses first-principles calculations to study the fundamental photovoltaic properties of CuAlX2 (X = S, Se, and Te) materials, and finds that CuAlTe2 is a better candidate for photovoltaic absorber due to its appropriate band gap value, smaller binding energy, and higher light absorption efficiency compared to CuAlS2 and CuAlSe2.
JOURNAL OF SOLID STATE CHEMISTRY
(2021)
Article
Chemistry, Physical
Jun-Qi Li, Cai Cheng, Man-Yi Duan
Summary: The electronic and optical properties of 2D Bi2O2X (X = S, Se, Te) were systematically investigated, revealing that the lattice constants and band gaps of H-Bi2O2X and Z-Bi2O2X decrease with increasing number of layers. The number of layers can greatly change the band gap range of H-Bi2O2S, even allowing for an adjustment from blue light energy to infrared light energy. Additionally, the band gaps of different Bi2O2X materials respond differently to the application of compressive and tensile strain.
APPLIED SURFACE SCIENCE
(2023)
Article
Engineering, Electrical & Electronic
Wei Zheng, Fu-Sheng Liu, Yi-Chen Lu, Zheng-Tang Liu, Wei-Hong Liu, Qi-Jun Liu
Summary: The structural, mechanical, electronic, and optical properties of alkali earth-metal Ba dichalcogenide BaX2 (X = O, S, Se and Te) were studied using first-principles calculations. The results indicate that these compounds have specific structures and properties, exhibiting anisotropy and ionic characteristics.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2022)
Article
Chemistry, Multidisciplinary
P. T. Linh Tran, Nguyen V. Hieu, Hoi Bui D, Q. Nguyen Cuong, Nguyen N. Hieu
Summary: In this work, novel two-dimensional Janus XCrSiN2 (X = S, Se, and Te) single-layers were proposed and their crystal structure, electronic properties, and carrier mobility were investigated using a first-principles method. The X-Cr-SiN2 single-layers were constructed by replacing the N-Si-N atomic layer on one side with chalcogen atoms (S, Se, or Te). The Janus XCrSiN2 single-layers exhibited energetically stability, small bandgap, and highly directional isotropy. The spin-orbit coupling had insignificant effects on their electronic properties, and an external electric field and strain could adjust their electronic features. The proposed Janus XCrSiN2 could be potential candidates for various applications, especially in nanoscale electronic devices.
NANOSCALE ADVANCES
(2023)
Article
Nanoscience & Nanotechnology
Wang-Li Tao, Ying-Qin Zhao, Zhao-Yi Zeng, Xiang-Rong Chen, Hua-Yun Geng
Summary: A new pentagonal network structure of PtM2 (M = S, Se, Te) monolayers is reported in this study, with calculated electronic structure and thermoelectric properties. The PtTe2 material shows excellent performance in thermal conductivity and thermoelectricity, especially at 600K. The p-type PtTe2 displays potential applications in the field of thermoelectricity.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Article
Chemistry, Physical
Vu V. Tuan, A. A. Lavrentyev, O. Y. Khyzhun, Nguyen T. T. Binh, Nguyen V. V. Hieu, A. I. Kartamyshev, Nguyen N. Hieu
Summary: The study focuses on the crystal structures and properties of γ-phase tin oxide and monochalcogenides γ-SnX. It is found that they have dynamic stability and Mexican-hat shaped energy dispersions. Biaxial strain can induce a phase transition from semiconductor to metal. In addition, γ-SnX structures have high electron mobility and isotropy.
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
(2022)
Article
Physics, Applied
Xuening Wang, Ju Chen, Hongli Chen, Yipeng An, Shi-Jing Gong
Summary: In this work, the band structures of 2H-VX2 (X = S, Se, and Te) were investigated through first-principles calculations. The results showed that 2H-VS2 and 2H-VSe2 are bipolar magnetic semiconductors, while 2H-VTe2 is a unipolar magnetic semiconductor. Interestingly, the electronic orbitals near the Fermi level of 2H-VX2 can be effectively modulated by biaxial strain, making them potential candidates for spintronics applications.
JOURNAL OF APPLIED PHYSICS
(2023)
Article
Nanoscience & Nanotechnology
Razieh Beiranvand
Summary: The MoX2 monolayers exhibit high absorption coefficients and broad absorption spectrum, making them promising materials for solar cells and optoelectronic applications. The wide band gap of TMDs, which is thickness dependent, also makes them potential candidates for optoelectronic devices.
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
(2021)
Article
Materials Science, Ceramics
Yiran Li, Mengling Lai, Juanli Zhao, Jiancheng Li, Wenxian Li, Bin Liu
Summary: Explored the structural and electronic properties of chalcogen-functionalized MXenes and Pt-anchored MXenes, showing their potential as efficient and low-cost catalysts and supports.
JOURNAL OF THE AMERICAN CERAMIC SOCIETY
(2024)
Article
Chemistry, Inorganic & Nuclear
Yong Huang, Xiaohua Mo, Weiqing Jiang, Rui Zhou, Xiangyu Li, Chunyan Hu, Xiaoli Zuo, Qi Wei
Summary: A systematic study on the dehydrogenation of LiBH4 modified with Bi and S/Se/Te was conducted using first-principles density functional theory calculations. It was found that co-substitution of Bi for Li and S/Se/Te for H resulted in lower occupation energy and total energy for Bi + S/Se/Te co-doped LiBH4. This co-doping led to a destabilized LiBH4 with enhanced dehydrogenation performance. The addition of Bi and S/Se/Te decreased the B-H covalent interactions and formed Li-S/Se/Te bonds. However, the presence of Bi and S additives may cause S-H interactions and the formation of H2S, leading to a loss of reversibility for hydrogen storage. Therefore, co-doping of Bi and Se appears to be beneficial for the decomposition of LiBH4.
INORGANIC CHEMISTRY COMMUNICATIONS
(2023)
Article
Materials Science, Multidisciplinary
Thi My Duyen Huynh, Duy Khanh Nguyen, Thi Dieu Hien Nguyen, Vo Khuong Dien, Hai Duong Pham, Ming-Fa Lin
Summary: The essential properties of monolayer HfX2 (X = S, Se, or Te) are fully explored using first-principles calculations. The materials demonstrate diverse characteristics, including being middle-gap semiconductor, narrow-gap semiconductor, or semimetal, with special structures in the density of states. These theoretical predictions are attributed to multi-orbital hybridizations in the Hf-X chemical bonds, indicating high potential for applications.
FRONTIERS IN MATERIALS
(2021)
Article
Physics, Applied
Nguyen T. Hiep, Cuong Q. Nguyen, N. A. Poklonski, C. A. Duque, Huynh Phuc, D. Lu, Nguyen N. Hieu
Summary: Based on density functional theory calculation, XMoSiP2 with 2 monolayers exhibit isotropic elastic properties and high Young's modulus, making them mechanically stable for experimental synthesis. The monolayers of SMoSiP2, SeMoSiP2, and TeMoSiP2 are observed to be semiconductor materials, with varying bandgap energies that can be manipulated by applying biaxial strain. The carrier mobilities of these materials are found to be anisotropic, suggesting their potential application in electronic devices.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2023)
Article
Physics, Applied
Nguyen T. Hiep, Cuong Q. Nguyen, Nguyen N. Hieu
Summary: In this study, the structural, mechanical, electronic, and transport properties of two-dimensional ternary Janus Si2XY (X / Y = S, Se, Te) monolayers are investigated using first-principles density functional theory. The results show that these materials have moderate bandgap energies and good stabilities, making them promising candidates for experimental synthesis. Additionally, the carrier mobilities of these monolayers are anisotropic and exhibit interesting characteristics in terms of electron mobility and Poisson's ratio. These findings open up new possibilities for advanced applications in electronics, optoelectronics, and nanomechanics.
APPLIED PHYSICS LETTERS
(2023)
Article
Chemistry, Inorganic & Nuclear
Wilayat Khan, H. U. Din, Sikander Azam, R. Neffati
Summary: This study investigates the optoelectronic and thermoelectric properties of Tl2Hg3X4 (X = S, Se, Te) using first-principle calculations. The materials show potential for applications in optoelectronics and renewable energy devices.
JOURNAL OF SOLID STATE CHEMISTRY
(2022)
Article
Engineering, Environmental
Xinfeng Zhou, Zirui Jia, Xingxue Zhang, Bingbing Wang, Xuehua Liu, Binghui Xu, Lei Bi, Guanglei Wu
Summary: NiCo based spinel materials have been considered promising electromagnetic wave absorbing materials due to their controllable structure, inexpensive procedure, and excellent dielectric property. The synthesis of NiCo2Se4 and NiCo2Te4 has shown remarkable absorption performance, providing important reference for expanding the application of NiCo-based spinel in the field of electromagnetic wave absorption.
CHEMICAL ENGINEERING JOURNAL
(2021)
Article
Materials Science, Multidisciplinary
Xingyi Wang, Kailin Luo, Lixin Xiong, Tengpeng Xiong, Zhendong Li, Jie Sun, Haiyong He, Chuying Ouyang, Zhe Peng
Summary: This study investigates the synergistic effect of functional alloying structure and Li+ solvation mediated interfacial kinetic on lithium metal protection. By constructing a Li alloy matrix with a bi-functional silver-Li3N blended interface, fast Li+ conductivity and high Li affinity can be achieved, leading to decreased nucleation and mass transfer-controlled overpotentials. Additionally, the inward diffusion depth of Li adatoms inside Ag sites can be limited by the Li+ solvation structure, thus elongating the Li protection ability of the Ag-Li3N interface.
ENERGY & ENVIRONMENTAL MATERIALS
(2023)
Article
Physics, Multidisciplinary
Yue-Hua An, Zhen-Sen Gao, Yu Guo, Shao-Hui Zhang, Zeng Liu, Wei-Hua Tang
Summary: The epsilon-Ga2O3 thin film was grown on a sapphire substrate using MOCVD method, and then utilized for the fabrication of a DUV photodetector. The thin film exhibited good crystal quality and surface morphology. The photodetector showed excellent optoelectronic performance and high wavelength selectivity when exposed to 254-nm DUV light, with a photoresponsivity of 175.69 A/W, detectivity of 2.46 x 10(15) Jones, EQE of 8.6 x 10(4)%, and good photocurrent-intensity linearity. At 5 V and under illumination with 800 mu W/cm(2) light intensity, a photocurrent gain as high as 859 was achieved due to the recycling gain mechanism and delayed carrier recombination; however, the photocurrent gain decreased with increasing incident light intensity due to the recombination of photogenerated carriers by the large photon flux.
Article
Engineering, Electrical & Electronic
Xiao-Hui Qi, Zeng Liu, Xue-Qiang Ji, Jian-Ying Yue, Yu-Song Zhi, Shan Li, Zu-Yong Yan, Yu-Feng Guo, Wei-Hua Tang
Summary: In this article, a deep-ultraviolet (DUV) photodetector (PD) based on a Ga2O3/TiO2 planar heterojunction is fabricated using both the solution and the metalorganic chemical vapor deposition (MOCVD) methods. The PD exhibits impressive DUV sensing properties, including high responsivity (R), specific detectivity (D-*), and external quantum efficiency (EQE). The PD can operate stably in a self-powered mode and has potential for applications in energy-conserving DUV sensing systems.
IEEE SENSORS JOURNAL
(2023)
Article
Multidisciplinary Sciences
Qingyi Zhang, Ning Li, Tao Zhang, Dianmeng Dong, Yongtao Yang, Yuehui Wang, Zhengang Dong, Jiaying Shen, Tianhong Zhou, Yuanlin Liang, Weihua Tang, Zhenping Wu, Yang Zhang, Jianhua Hao
Summary: By lattice and band engineering, Zhang et al. constructed a unipolar barrier avalanche photodiode with suppressed dark current and reinforced reverse breakdown. Ga2O3-based solar blind avalanche photodetectors exhibit low voltage operation, optical filter-free and monolithic integration of photodetector arrays, and therefore they are promising to be an alternative to the bulky and fragile photomultiplier tubes for weak signal detection in deep-ultraviolet region. These findings provide insights into precise manipulation of band alignment in avalanche photodetectors, and also offer exciting opportunities for further developing high-performance Ga2O3-based electronics and optoelectronics.
NATURE COMMUNICATIONS
(2023)
Article
Engineering, Electrical & Electronic
Lei Li, Zeng Liu, Kai Tang, Shu-Lin Sha, Shao-Hui Zhang, Ming-Ming Jiang, Mao-Lin Zhang, Ang Bian, Yu-Feng Guo, Wei-Hua Tang
Summary: In this study, a Ga-doped ZnO/AlGaN heterojunction is introduced for UV photodetection, which is enhanced by the pyro-photoelectric effect coupling. The self-powered UV photodetector exhibits a responsivity of 0.063 mA W-1 under illumination and an increased photocurrent of 45 pA after pyro-photoelectric enhancement. The heterojunction UV photodetector can operate in both forward-biased photoconductive mode and reverse-biased depletion mode, with a fast temporal laser response.
IEEE SENSORS JOURNAL
(2023)
Article
Engineering, Electrical & Electronic
Li-Li Yang, Zeng Liu, Qiang Xu, Mao-Lin Zhang, Shan Li, Yu-Feng Guo, Wei-Hua Tang
Summary: By introducing sporadic Ag nanostructures via a facile room-temperature magnetron sputtering technology and subsequent low-temperature annealing process, a local Schottky junction is formed at the interface between In electrodes and amorphous Ga2O3 film in the InAg/amorphous Ga2O3-In metal-semiconductor-metal (MSM) photodetector. The constructed Schottky barriers result in an extremely low dark current and excellent photodetection performance.
IEEE SENSORS JOURNAL
(2023)
Article
Engineering, Electrical & Electronic
Maolin Zhang, Wanyu Ma, Shan Li, Lili Yang, Zeng Liu, Yufeng Guo, Weihua Tang
Summary: By fabricating and studying a Ga2O3 metal-semiconductor-metal (DUV PD) detector, we found that it has good detection performance, but the performance decreases with increasing temperature.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Engineering, Electrical & Electronic
Zeng Liu, Shu-Lin Sha, Gao-Hui Shen, Ming-Ming Jiang, Mao-Lin Zhang, Yu-Feng Guo, Wei-Hua Tang
Summary: In this letter, an improved Ga2O3 solar-blind photodetector is presented, which utilizes Ga2O3 thin film grown by metalorganic chemical vapor deposition. The introduction of Pt nanoparticles as decoration on the Ga2O3 photodetector resulted in significant enhancements in responsivity, detectivity, and external quantum efficiency. The improvement is attributed to the resonance between optimal Pt nanoparticles and Ga2O3, leading to enhanced photon absorbance and carrier injection.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Engineering, Electrical & Electronic
Qing Yao, Jing Chen, Yuxuan Dai, Jiafei Yao, Jun Zhang, Maolin Zhang, Jianhua Liu, Weihua Tang, Jinping Zhang, Bo Zhang, Yufeng Guo
Summary: In this article, a novel technique for predicting the static output characteristics of IGBTs is proposed by combining compact models and artificial neural networks (ANNs). The method utilizes model parameters in the electronic design automation (EDA) circuit simulator to obtain output characteristics, and a phased prediction (PP) scheme is introduced to reduce the prediction error. The effectiveness of the method is verified by comparing results with TCAD simulation and datasheet, and the method significantly improves speed and reduces design cost compared to TCAD simulation.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Engineering, Electrical & Electronic
Xue-Qiang Ji, Ming-Yu Liu, Zu-Yong Yan, Shan Li, Zeng Liu, Xiao-Hui Qi, Jian-Ying Yuan, Jin-Jin Wang, Yuan-Chun Zhao, Wei-Hua Tang, Pei-Gang Li
Summary: A surface VO defect compensation engineering using oxygen-plasma treatment was conducted to improve the device performance of beta-Ga2O3 film. The treated photodetectors showed significantly improved dark current, responsivity rejection ratio, rise and decay speed, and high sensitivity to detect weak UV signals.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Physics, Applied
Xueqiang Ji, Xiaohui Qi, Jianying Yue, JinJin Wang, Zuyong Yan, Shan Li, Zeng Liu, Weihua Tang, Peigang Li
Summary: A nonthermal N plasma-based treatment is proposed to obtain a doped surface on ss-Ga2O3 films, which enhances the luminescence effect related to acceptor defects. The surface conductive properties are enhanced by the defect compensation of oxygen vacancy (VO) donor defects. Detailed investigations into the surface defect compensation of N-doped Ga2O3 thin films have great research potential for device applications.
JOURNAL OF APPLIED PHYSICS
(2023)
Article
Physics, Multidisciplinary
Maolin Zhang, Wanyu Ma, Qiong Zhang, Ang Bian, Zeng Liu, Lili Yang, Shan Li, Yufeng Guo, Weihua Tang
Summary: In this study, a heterojunction photodetector combining MAPbBr3 and GaN was constructed, and its detection capabilities were examined. The results demonstrated superior performance, including high rectification ratio and photo-to-dark current ratio. Additionally, the characteristics of the photodetector and possible methods for further performance enhancements were discussed.
Article
Engineering, Multidisciplinary
Gaohui Shen, Zeng Liu, Kai Tang, Shulin Sha, Lei Li, Chee-Keong Tan, Yufeng Guo, Weihua Tang
Summary: This study introduces an 8x8 Ga2O3 solar-blind ultraviolet photodetector array with high photo-response performance and uniform responsivity, which is of great significance for developing Ga2O3-based optoelectronic device applications.
SCIENCE CHINA-TECHNOLOGICAL SCIENCES
(2023)
Article
Materials Science, Multidisciplinary
Song Qi, Jiahang Liu, Jianying Yue, Xueqiang Ji, Jiaying Shen, Yongtao Yang, Jinjin Wang, Shan Li, Zhenping Wu, Weihua Tang
Summary: In this work, a graphene/beta-Ga2O3/Ag asymmetric Schottky junction photodetector was constructed to address the issue of elevated dark currents in existing graphene/Ga2O3 devices. By taking advantage of the asymmetric structure design to suppress dark current and the transparent graphene electrode to increase carrier collection efficiency, the device achieved outstanding responsivity, detectivity, external quantum efficiency, and response time. Importantly, it exhibited low dark current and high light-to-dark ratio. Overall, the graphene/beta-Ga2O3/Ag asymmetric Schottky junction photodetector has considerable potential as a deep ultraviolet detector.
JOURNAL OF MATERIALS CHEMISTRY C
(2023)
Article
Physics, Multidisciplinary
Lei Li, Yu-Song Zhi, Mao-Lin Zhang, Zeng Liu, Shao-Hui Zhang, Wan-Yu Ma, Ma Qiang, Gao-Hui Shen, Xia Wang, Yu-Feng Guo, Wei-Hua Tang
Summary: In this study, a Ga2O3/Al0.1Ga0.9N heterojunction DU PD was successfully fabricated and its photodetection performance was evaluated. The experimental results showed that the PD exhibited good photocurrent response under 254nm and 365nm DUP light illumination, and had low dark current. In addition, the operating mechanism of the dual-band dual-mode heterojunction PD was analyzed, and it was found that it could be sensitive to UVA and UVC wavelengths, expanding its photodetection range.
ACTA PHYSICA SINICA
(2023)