期刊
JOURNAL OF RAMAN SPECTROSCOPY
卷 46, 期 12, 页码 1225-1229出版社
WILEY
DOI: 10.1002/jrs.4769
关键词
defective SiC; phonon confinement; surface optical mode; amorphous SiC
类别
资金
- 111 Project of China [B08040]
- Natural Science Foundation of China [51271147, 51201134, 51201135]
Phonon confinement effect and surface optical mode in SiC nanocrystal have been investigated through Raman spectroscopy. Considering high density of stacking faults in SiC grains, the correlation length of RWL (proposed by Richter, Wang, Li to explain phonon confinement in nano silicon) model is determined as a distance between nearby stacking faults. Thus, homogeneous region becomes thin slices in cylindrical SiC grains, which redefines weighting function. Effect of anisotropy of phonon dispersion curve is also analyzed during calculation. The additional 875-cm(-1) band is attributed to defects and amorphous SiC, which is confirmed by transmission electron microscopy. SiC grains are approximated as column array with grain boundary substances regarded as surrounding medium, which explains surface optical phonon mode at 915cm(-1). Copyright (c) 2015 John Wiley & Sons, Ltd.
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