期刊
ELECTRONICS LETTERS
卷 50, 期 25, 页码 1958-1959出版社
INST ENGINEERING TECHNOLOGY-IET
DOI: 10.1049/el.2014.2780
关键词
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资金
- National Research Foundation of Korea (NRF) grant - Korean government (MEST) [2013R1A2A2A01015202]
- National Research Foundation of Korea [2013R1A2A2A01015202] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
A wideband single-layer absorber at X-band adopting trumpet structures is presented. One unit of the proposed absorber is composed of a trumpet-shaped resonator loading four chip resistors, a metallic back-plane and an FR-4 (epsilon(r) = 4.4-j0.02) substrate between them. The absorption is 99% at 10.9 GHz. The full width at half maximum is 95% at 12.7 GHz (6.7-18.7 GHz). The 90% absorption bandwidth is 65% at 12.75 GHz (8.6-16.9 GHz). The size of the unit cell is 5.6 x 5.6 x 2.4 mm(3). The proposed absorber is almost insensitive to polarisations of incident waves due to the symmetry of the structure. The results of EM simulation and measurements are in good agreement.
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