期刊
JOURNAL OF PHYSICS-CONDENSED MATTER
卷 27, 期 15, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0953-8984/27/15/154203
关键词
resonant tunneling; STM; dopant; silicon; donor; rate equations
资金
- European Commission Future and Emerging Technologies Proactive Project MULTI [317707]
- ARC Centre of Excellence for Quantum Computation and Communication Technology [CE110001027]
- US Army Research Office [W911NF-08-1-0527]
- Foundation for Fundamental Research on Matter (FOM), Netherlands Organization for Scientific Research (NWO)
- US National Science Foundation [EEC-0228390]
- [FT100100589]
The ability to control single dopants in solid-state devices has opened the way towards reliable quantum computation schemes. In this perspective it is essential to understand the impact of interfaces and electric fields, inherent to address coherent electronic manipulation, on the dopants atomic scale properties. This requires both fine energetic and spatial resolution of the energy spectrum and wave-function, respectively. Here we present an experiment fulfilling both conditions: we perform transport on single donors in silicon close to a vacuum interface using a scanning tunneling microscope (STM) in the single electron tunneling regime. The spatial degrees of freedom of the STM tip provide a versatility allowing a unique understanding of electrostatics. We obtain the absolute energy scale from the thermal broadening of the resonant peaks, allowing us to deduce the charging energies of the donors. Finally we use a rate equations model to derive the current in presence of an excited state, highlighting the benefits of the highly tunable vacuum tunnel rates which should be exploited in further experiments. This work provides a general framework to investigate dopant-based systems at the atomic scale.
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