Doping effect on shift of threshold voltage of graphene-based field-effect transistors

标题
Doping effect on shift of threshold voltage of graphene-based field-effect transistors
作者
关键词
-
出版物
ELECTRONICS LETTERS
Volume 47, Issue 11, Pages 663
出版商
Institution of Engineering and Technology (IET)
发表日期
2011-05-25
DOI
10.1049/el.2011.0770

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