Reversible optical gate switching in Si wire waveguide integrated with Ge2Sb2Te5 thin film

Reversible switching of an optical gate switch in a Si waveguide including a thin Ge2Sb2Te5 phase-change material layer is reported. The phase-change was triggered by 660 nm laser pulse irradiation onto the Ge2Sb2Te5 layer with no structural damage. The switching time from the initial amorphous state to the crystalline state was 240 ns, and that from the crystalline state to the amorphous state was 110 ns. The maximum extinction ratios for switching-off and switching-on over the wavelength range from 1525 to 1600 nm were 5.7 and 2.5 dB, respectively.