InSbN based p-n junctions for infrared photodetection

标题
InSbN based p-n junctions for infrared photodetection
作者
关键词
-
出版物
ELECTRONICS LETTERS
Volume 46, Issue 11, Pages 787
出版商
Institution of Engineering and Technology (IET)
发表日期
2010-05-29
DOI
10.1049/el.2010.0713

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