Oxide-confined 850 nm VCSELs operating at bit rates up to 40 Gbit/s

Oxide-confined 850 nm vertical-cavity surface-emitting lasers operating at 40 Gbit/s at current densities similar to 10 kA/cm(2) are realised. The deconvoluted rise time of the device is below 10 ps and remains hardly temperature sensitive up to 100 degrees C.