Current collapse reduction in InAlN/GaN MOS HEMTs by in situ surface pre-treatment and atomic layer deposition of ZrO2 high-k gate dielectrics

出版年份 2009 全文链接

标题

作者

关键词

出版物

Volume 45, Issue 11, Pages 570

出版商

Institution of Engineering and Technology (IET)

发表日期

2009-05-22

DOI

10.1049/el.2009.0728

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