Unipolar resistive switching characteristic of semiconducting poly(o-anthranilic acid) film

A resistive switching memory device was fabricated using poly (o-anthranilic acid) (PARA) film. The device has a metal/PARA/metal sandwich-like structure. When the device is biased with voltage beyond a critical value, it suddenly switches from a high resistive state to a low resistive state, with a difference in injection current of more than three orders of magnitude. By controlling the injection current level, it was possible to achieve non-volatile memory behaviour. The devices possess a prolonged retention time of 3 x 10(3) s after switching. The conduction mechanism in the off-state implies that the resistive switching of the device can be explained in terms of. lament theory.