Article
Engineering, Electrical & Electronic
Xiaoyu Ding, Liang Song, Guohao Yu, Yong Cai, Yuhua Sun, Bingliang Zhang, Zhongkai Du, Zhongming Zeng, Xinping Zhang, Baoshun Zhang
Summary: The study investigates the AlGaN/GaN high-electron-mobility transistor (HEMT) passivated by fluorinated graphene (FG). The gate leakage current significantly decreases after F plasma treatment and passivation with FG and FG/SiNx. The improvement in gate leakages is mainly attributed to the enhancement of Schottky barrier heights and augmentation of activation energy.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2023)
Article
Engineering, Electrical & Electronic
Mengyuan Hua, Chengcai Wang, Junting Chen, Junlei Zhao, Song Yang, Li Zhang, Zheyang Zheng, Jin Wei, Kevin J. Chen
Summary: In this study, the gate leakage mechanisms of E-mode p-n junction/AlGaN/GaN HEMTs were investigated. It was found that the intrinsic gate leakage is limited by the transport of holes through the p-GaN layer, and lateral leakage current as well as the role of variable hopping process (VRH) were also discussed. Gate leakage current models based on these mechanisms were able to quantitatively replicate the gate-leakage behavior across the entire relevant range of gate biases and temperatures.
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Engineering, Electrical & Electronic
Luca Nela, Halil Kerim Yildirim, Catherine Erine, Remco Van Erp, Peng Xiang, Kai Cheng, Elison Matioli
Summary: The study presents a new surface passivation technology for multi-channel power devices, utilizing SiO2 and Si3N4 layers to effectively reduce electron traps and improve dynamic performance, resulting in significant reduction of dynamic on-resistance even under large off-state voltages. This approach demonstrates the potential of multi-channel technology for future power electronic applications by offering reduced current collapse and comparable dynamic performance with passivated single-channel devices.
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Computer Science, Information Systems
Sushanta Bordoloi, Ashok Ray, Gaurav Trivedi
Summary: This paper presents a detailed analysis of gate-shaped AlGaN / GaN HEMT with field plate, showing that the threshold voltage and transconductance remain constant for various combinations of gate-shaped and field plate placements. The use of field plate significantly reduces leakage current, electric field, and electron temperature, leading to an enhancement in device reliability. The proposed structure is expected to be a step ahead of conventional devices and have major applications in the high power domain.
Article
Engineering, Electrical & Electronic
Sujan Sarkar, Ramdas P. Khade, Amitava DasGupta, Nandita DasGupta
Summary: The effect of the GaN cap layer on the performance of AlInN/GaN-based HEMTs has been studied. The addition of the GaN cap layer reduces gate leakage current, increases saturation drain current, improves subthreshold swing, and enhances the I-ON/I-OFF ratio of HEMTs. It also reduces the current collapse due to gate-lag and drain-lag and improves breakdown voltage.
MICROELECTRONIC ENGINEERING
(2022)
Article
Engineering, Electrical & Electronic
Arghyadeep Sarkar, Yaser M. Haddara
Summary: We have developed a numerical model for predicting and analyzing gate leakage current in normally off pGaN/AlGaN/GaN high electron mobility transistors. The model has been validated against experimental data from multiple research groups and proven to be accurate and reliable.
SOLID-STATE ELECTRONICS
(2022)
Article
Engineering, Electrical & Electronic
Chia-Hao Liu, Hsien-Chin Chiu, Hsiang-Chun Wang, Hsuan-Ling Kao, Chong-Rong Huang
Summary: The study shows that DJ-HEMT exhibits higher gate voltage swing in the gate region due to the dual junction, enhancing gate performance. Compared to ST-HEMT, DJ-HEMT has higher V-TH, saturation current, I-ON/I-OFF ratio, and gate swing voltage. In addition, DJ-HEMT also has lower leakage current and longer lifetime measurement.
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Physics, Applied
Xingjie Huang, Yanhui Xing, Guohao Yu, Wenxin Tang, Xing Wei, Liang Song, Xiaodong Zhang, Yaming Fan, Zhongming Zeng, Yong Cai, Baoshun Zhang, Zengli Huang, Rong Huang, Jun Han
Summary: A thin SiN(x) film deposited on the p-GaN layer before H plasma implantation reduces gate reverse leakage current by four orders of magnitude and increases the OFF-state breakdown voltage by 89%. It also improves the dynamic performance of the device by blocking excessive H plasma and reducing damage in the AlGaN barrier layer.
APPLIED PHYSICS EXPRESS
(2022)
Article
Chemistry, Analytical
Moath Alathbah, Khaled Elgaid
Summary: This letter presents a novel approach to address the issue of metal discontinuity in AlGaN/GaN HEMTs. By extending the mesa below the gate, the proposed method ensures a planar gate configuration and improves the DC and RF performance of the device.
Article
Engineering, Electrical & Electronic
Sheng Zhang, Ke Wei, Yi-chuan Zhang, Xiao-juan Chen, Xin-Yu Liu, Jie-bin Niu
Summary: Compared to traditional single-gate devices, the dual-gate AlGaN/GaN HEMTs have higher breakdown voltage, lower gate leakage current, and higher drift threshold voltage, showing greater potential for power gain.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
(2022)
Article
Engineering, Electrical & Electronic
Khawaja Nizammuddin Subhani, Nayana Remesh, S. Niranjan, Srinivasan Raghavan, R. Muralidharan, Digbijoy N. Nath, K. N. Bhat
Summary: This study investigates the material properties of PECVD amorphous Silicon nitride films and their impact on gate leakage in AlGaN/GaN HEMTs during passivation. By controlling the gas flow ratio, it is found that a certain proportion of SiNx can effectively reduce gate leakage. The optimized material properties of SiNx can maintain the stability of electrical performance after passivation in HEMTs.
SOLID-STATE ELECTRONICS
(2021)
Article
Engineering, Electrical & Electronic
Yanhui Xing, Zishuo Han, Xingjie Huang, Guohao Yu, Can Yin, Baolu Guan, Jun Han, Baoshun Zhang, Zhongming Zeng
Summary: This paper investigates the use of Si3N4 passivation layer on GaN-based HEMT devices and finds that the devices with Si3N4/Al2O3 stacked structure perform better, showing reduced gate leakage and improved reliability by decreasing H plasma damage and suppressing the increase in gate leakage current.
MICROELECTRONICS RELIABILITY
(2023)
Article
Materials Science, Multidisciplinary
S. Zhang, K. Wei, Y. C. Zhang, X. J. Chen, S. Huang, H. B. Yin, G. G. Liu, T. T. Yuan, Y. K. Zheng, X. H. Wang, X. Y. Liu
Summary: The use of PEALD SiN as the gate dielectric layer in GaN MIS-HEMTs leads to a significant reduction in gate leakage current, improvement in drain current characteristics, and enhanced 2DEG channel mobility. The interface states distribution is quantitatively described by CC-DLTS, showcasing a low density of interface traps.
Article
Computer Science, Information Systems
Xiaoyu Ding, Xu Yuan, Tao Ju, Guohao Yu, Bingliang Zhang, Zhongkai Du, Zhongming Zeng, Baoshun Zhang, Xinping Zhang
Summary: A technique called ion implantation was used to passivate p-GaN and create a normally off p-GaN/AlGaN/GaN HEMT. Through experiments, it was determined that an ion implantation energy of 20 keV and a dosage of 1.5 x 10(13) cm(-2) were required for passivation. Annealing at 400 degrees C was found to be ideal for obtaining a normally off p-GaN HEMT with desirable electrical properties.
Article
Engineering, Electrical & Electronic
Soumen Mazumder, Zhan-Gao Wu, Po Cheng Pan, Ssu-Hsien Li, Yeong-Her Wang
Summary: The electrical performance of AlGaN/AlN/GaN nanochannel high electron mobility transistors (NC-HEMTs) was improved through post-gate annealing treatment, leading to enhanced DC parameters, reduced reverse gate leakage current, increased maximum transconductance, and improved gate controllability.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
(2021)
