期刊
ELECTRONICS LETTERS
卷 44, 期 6, 页码 408-409出版社
INST ENGINEERING TECHNOLOGY-IET
DOI: 10.1049/el:20080172
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Imaging at 0.6 THz is tested with a commercial GaAs high-electron-mobility transistor (HEMT) operated at room temperature. The results allow the assessment of the potential of future antenna-fitted HEMT arrays for real-time imaging.
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