期刊
JOURNAL OF PHYSICS D-APPLIED PHYSICS
卷 48, 期 43, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0022-3727/48/43/435108
关键词
tungsten doped tin oxide (TWO); oxygen vacancy; thin-film-transistors (TFTs); magnetron sputtering
资金
- 973 Programme [2013CB328803]
- National Natural Science Foundation of China [61136004, 61471126]
Tungsten doped tin oxide thin film transistors (TWO-TFTs) were fabricated by radio frequency magnetron sputtering. With TWO thin films as the channel layers, the TFTs show lower off-current and positive shift turn-on voltage than the intrinsic tin oxide TFTs, which can be explained by the reason that W doping is conducive to suppress the carrier concentration of the TWO channel layer. It is important to elect an appropriate channel thickness for improving the TFT performance. The optimum TFT performance in enhancement mode is achieved at W doping content of 2.7 at% and channel thickness of 12 nm, with the saturation mobility, turn-on voltage, subthreshold swing value and on-off current ratio of 5 cm(2) V-1 s(-1), 0.4 V, 0.4 V/decade and 2.4 x 10(6), respectively.
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