期刊
JOURNAL OF PHYSICS D-APPLIED PHYSICS
卷 49, 期 4, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0022-3727/49/4/045105
关键词
carrier dynamics; p-type GaN; carrier distribution; transient absorption
资金
- National Natural Science Fund of China [11304216, 91227113]
- Priority Academic Program Development of Jiangsu Higher Education Institutions (PAPD)
- Prospective Joint Research Project of Cooperative Innovation Fund of Jiangsu Province, China [BY2014059-11]
The dependence of the carrier distribution on photoexcited carrier dynamics in a p-type Mg-doped GaN (GaN:Mg) wafer were systematically measured by femtosecond transient absorption (TA) spectroscopy. The homogeneity of the carrier distribution was modified by tuning the wavelength of the UV pulse excitation around the band gap of GaN: Mg. The TA kinetics appeared to be biexponential for all carrier distributions, and only the slower component decayed faster as the inhomogeneity of the carrier distribution increased. It was concluded that the faster component (50-70 ps) corresponded to the trap process of holes by the Mg acceptors, and the slower component (150-600 ps) corresponded to the combination of non-radiative surface recombination and intrinsic carrier recombination via dislocations. Moreover, the slower component increased gradually with the incident fluence due to the saturation of surface states.
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