4.5 Article

Thermoelectric properties of Ni-doped CuInTe2

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PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.jpcs.2015.03.012

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Semiconductors; Chalcogenides; X-ray diffraction; Transport properties

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Polycrystalline samples of composition Cu1-xNixInTe2 (for x=0-0.05) were synthesized from elements of 5 N purity using a solid-state reaction. The phase purity of the products was verified by X-ray diffraction. Samples for measurement of the transport properties were prepared using hot-pressing. The samples were then characterized by the measurement of electrical conductivity, the Hall coefficient, the Seebeck coefficient, and the thermal conductivity over a temperature range of 300-675 K. All of the samples demonstrate p-type conductivity. We discuss the influence of Ni substitution on the free carrier concentration and the thermoelectric performance. The investigation of the thermoelectric properties shows an improvement up to 50% of Zr in the temperature range of 300-600 K. (C) 2015 Elsevier Ltd. All rights reserved.

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