Hot Carrier Effect on Gate-Induced Drain Leakage Current in n-MOSFETs with HfO2∕Ti1-xNx Gate Stacks

标题
Hot Carrier Effect on Gate-Induced Drain Leakage Current in n-MOSFETs with HfO2∕Ti1-xNx Gate Stacks
作者
关键词
-
出版物
ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume 15, Issue 6, Pages H211
出版商
The Electrochemical Society
发表日期
2012-05-01
DOI
10.1149/2.001206esl

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