Thermally Stable TiVCrZrHf Nitride Films as Diffusion Barriers in Copper Metallization

Effects of substrate temperature on the structure and mechanical properties of (TiVCrZrHf)N coatings

(2011) Shih-Chang Liang et al.   APPLIED SURFACE SCIENCE

Characteristics of a 10nm-thick (TiVCr)N multi-component diffusion barrier layer with high diffusion resistance for Cu interconnects

(2011) Du-Cheng Tsai et al.   SURFACE & COATINGS TECHNOLOGY

5 nm-Thick (AlCrTaTiZrRu)N0.5 Multi-Component Barrier Layer with High Diffusion Resistance for Cu Interconnects

(2011) Shou-Yi Chang et al.   Nanoscience and Nanotechnology Letters

Ultrathin (AlCrTaTiZr)N[sub x]/AlCrTaTiZr Bilayer Structures with High Diffusion Resistance for Cu Interconnects

(2010) Shou-Yi Chang et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

10-nm-thick quinary (AlCrTaTiZr)N film as effective diffusion barrier for Cu interconnects at 900 °C

(2009) Shou-Yi Chang et al.   APPLIED PHYSICS LETTERS

Barrier capability of Zr–N films with titanium addition against copper diffusion

(2009) Ying Wang et al.   MATERIALS CHEMISTRY AND PHYSICS

Investigation of Zr–Si–N∕Zr bilayered film as diffusion barrier for Cu ultralarge scale integration metallization

(2008) Ying Wang et al.   APPLIED PHYSICS LETTERS

Ir∕TaN as a bilayer diffusion barrier for advanced Cu interconnects

(2008) L. C. Leu et al.   APPLIED PHYSICS LETTERS

Thermally stable amorphous (AlMoNbSiTaTiVZr)50N50 nitride film as diffusion barrier in copper metallization

(2008) Ming-Hung Tsai et al.   APPLIED PHYSICS LETTERS

Reactively Sputtered Mo–V Nitride Thin Films as Ternary Diffusion Barriers for Copper Metallization

(2008) Prodyut Majumder et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Barrier capability of Zr–N films with different density and crystalline structure in Cu/Si contact systems

(2008) Ying Wang et al.   MATERIALS LETTERS