期刊
ELECTROCHEMICAL AND SOLID STATE LETTERS
卷 14, 期 4, 页码 H161-H162出版社
ELECTROCHEMICAL SOC INC
DOI: 10.1149/1.3544492
关键词
-
Heteroepitaxial cubic silicon carbide (3C-SiC) is an extremely promising material for micro-and nano-electromechanical systems due to its large Young's modulus. Unfortunately, the heteroepitaxy of 3C-SiC on Si substrate is affected by the high mismatch in the lattice parameters and the thermal expansion coefficients between the two dissimilar materials that generate a high number of defects in the material. In this work, through the measurement of natural resonant frequencies and Raman shift analysis, a strong relationship between the mechanical proprieties of the material (Young's modulus) and the film crystal quality (defect density) was observed. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3544492] All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据