Electrical Charging/Discharging Properties of Organic Memory Device Using CdSe Nanoparticles/PMMA Blend as the Tunneling Layer

The electrical charging/discharging phenomena in organic memory based on the PMMA+CdSe nano-particles (NPs) blend tunneling insulator were demonstrated. The CdSe NPs multilayer could be easily fabricated by simple spin-coating process of blended solution of CdSe NPs in PMMA. Due to the hole trapping, the capacitance-voltage (C-V) characteristics exhibit a large counterclockwise hysteresis that is proportional to the gate bias sweep range. This simple fabrication method have a large memory window of 14.9 V after writing and erasing modes and a long charge retention ability over 10,000 s. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3564876] All rights reserved.