期刊
ELECTROCHEMICAL AND SOLID STATE LETTERS
卷 13, 期 3, 页码 G29-G32出版社
ELECTROCHEMICAL SOC INC
DOI: 10.1149/1.3280224
关键词
atomic layer deposition; biological techniques; electrolytes; hafnium compounds; high-k dielectric thin films; photoelectron spectra
资金
- National Science Foundation [ECS-9731293]
- Stanford Graduate Fellowship
Highly sensitive bio-field-effect transistor (bioFET) molecular sensors require optimized gate dielectrics for an efficient surface charge modulation of the semiconductor channel. Hafnium oxide has a dielectric constant at least four times greater than conventional SiO2 gate dielectrics, increasing the potential bioFET sensitivity and permitting the use of a thicker dielectric layer to better protect the semiconductor surface. In this study, we demonstrate the stability of the capacitance response of atomic-layer-deposited HfO2 dielectrics in aqueous electrolytes. We also verify the possibility of biotin functionalization of HfO2 using photoelectron spectroscopy, capacitance-voltage analysis, and molecular atomic force microscopy imaging methods.
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