Reduced Metal Contamination in Atomic-Layer-Deposited HfO[sub 2] Films Grown on Si Using O[sub 3] Oxidant Generated Without N[sub 2] Assistance

出版年份 2010 全文链接

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作者

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出版物

Volume 13, Issue 8, Pages G65

出版商

The Electrochemical Society

发表日期

2010-06-12

DOI

10.1149/1.3430657

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