Effect of Excimer Laser Annealing on the Performance of Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors

Improvement of InGaZnO4Thin Film Transistors Characteristics Utilizing Excimer Laser Annealing

(2009) Mitsuru Nakata et al.   Applied Physics Express

Electronic structure of the amorphous oxide semiconductor a-InGaZnO4-x: Tauc-Lorentz optical model and origins of subgap states

(2009) Toshio Kamiya et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Comparison of the effects of Ar and H2 plasmas on the performance of homojunctioned amorphous indium gallium zinc oxide thin film transistors

(2008) Byung Du Ahn et al.   APPLIED PHYSICS LETTERS

Source/Drain Series-Resistance Effects in Amorphous Gallium–Indium Zinc-Oxide Thin Film Transistors

(2008) Jaechul Park et al.   IEEE ELECTRON DEVICE LETTERS

Gallium–Indium–Zinc-Oxide-Based Thin-Film Transistors: Influence of the Source/Drain Material

(2008) Pedro Barquinha et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Factors controlling electron transport properties in transparent amorphous oxide semiconductors

(2008) Hideo Hosono et al.   JOURNAL OF NON-CRYSTALLINE SOLIDS

Comprehensive Study on the Transport Mechanism of Amorphous Indium-Gallium-Zinc Oxide Transistors

(2008) Jae Kyeong Jeong et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY