4.0 Article

Improving the Performance of Green LEDs by Low-Temperature Annealing of p-GaN with PdZn

期刊

ELECTROCHEMICAL AND SOLID STATE LETTERS
卷 12, 期 5, 页码 H185-H187

出版社

ELECTROCHEMICAL SOC INC
DOI: 10.1149/1.3093094

关键词

annealing; electroluminescence; gallium compounds; II-VI semiconductors; indium compounds; light emitting diodes; palladium compounds; semiconductor quantum wells

资金

  1. Korea Science and Engineering Foundation (KOSEF), Korea government (MOST) [R17-2007-078-01000-0]
  2. Samsung Electro-Mechanics Co., Ltd., in Korea

向作者/读者索取更多资源

This article reports the electrical properties of p-GaN annealed at low activation temperature by using a PdZn film in green InGaN/GaN multiquantum well (MQW) light-emitting diodes (LEDs). Electroluminescence (EL) intensity of green MQW LED annealed at 600 degrees C using PdZn was improved by 33% at 20 mA compared to that annealed at 800 degrees C without PdZn. These results are attributed to an increase of the hole concentration of p-GaN due to removal of hydrogen in p-GaN by PdZn and a decrease in thermal damage of MQW at low activation temperature.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.0
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据