期刊
ELECTROCHEMICAL AND SOLID STATE LETTERS
卷 12, 期 4, 页码 H155-H159出版社
ELECTROCHEMICAL SOC INC
DOI: 10.1149/1.3079480
关键词
amorphous semiconductors; anodes; antimony compounds; cathodes; crystallisation; electromigration; germanium compounds; high-temperature effects; phase change materials; random-access storage; reliability; solid-state phase transformations
资金
- Korean Ministry of Science and Technology
We report an electric-field-induced directional mass movement of Ge2Sb2Te5 in bottleneck geometry. Under high-electric-stress circumstances (>10(6) A cm(-2)), a mass of Ge2Sb2Te5 tends to move toward the cathode (-) by the remaining mass depletion at the anode (+). The high electric stress induces an asymmetric compositional separation such that Sb is distributed toward the cathode (-) whereas Te is distributed toward the anode (+). Ionicity in Ge2Sb2Te5 at high temperature and high electric stress can be one of the origins of the asymmetric behavior. The electric-field-induced mass movement may provide insight on the device reliability of phase-change random access memory.
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