期刊
ELECTROCHEMICAL AND SOLID STATE LETTERS
卷 11, 期 2, 页码 J15-J18出版社
ELECTROCHEMICAL SOC INC
DOI: 10.1149/1.2817483
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In this paper, we describe a newly developed dry etching process for the fabrication of ZnO-based oxide thin-film transistors (TFTs). The dry etching behavior of ZnO and Al2O3 thin films was systematically investigated by varying the etching gas mixtures and their mixing ratios in a dry etching system using high-density helicon plasma. We fabricated an oxide TFT using an Al2O3/ZnO gate stack patterned by dry etching and confirmed good device characteristics, in which the field effect mobility and the ratio of on/off drain currents were about 0.8 cm(2)/(V s) and 10(7), respectively. (c) 2007 The Electrochemical Society.
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