期刊
ELECTROANALYSIS
卷 25, 期 4, 页码 851-856出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/elan.201200581
关键词
Graphene oxide; Field-effect transistors; Aptamer; Hg2+ ions; Sensors; DNA
资金
- Israel Science Foundation
Graphene oxide (GO) is deposited onto the Al2O3 gates of field-effect transistor devices to yield a functional matrix for the sensing of thrombin or Hg2+ ions. The deposition of an aptamer subunit against thrombin or a tailored nucleic acid with appropriate T mismatches on the GO, yield active surfaces for the analysis of thrombin or Hg2+ ions. The desorption of the aptamer-subunit from GO, through the formation of the aptamer-thrombin complex, or the desorption of the THg2+T-bridged duplex DNA alter the gate potential, thus providing a signal for the sensing events.
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