4.8 Article

CVD-Enabled Graphene Manufacture and Technology

期刊

JOURNAL OF PHYSICAL CHEMISTRY LETTERS
卷 6, 期 14, 页码 2714-2721

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acs.jpclett.5b01052

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资金

  1. ERC [279342]
  2. EPSRC [EP/K016636/1]
  3. St. John's College, Cambridge
  4. Engineering and Physical Sciences Research Council [EP/K016636/1] Funding Source: researchfish
  5. European Research Council (ERC) [279342] Funding Source: European Research Council (ERC)
  6. EPSRC [EP/K016636/1] Funding Source: UKRI

向作者/读者索取更多资源

Integrated manufacturing is arguably the most challenging task in the development of technology based on graphene and other 2D materials, particularly with regard to the industrial demand for electronic-grade large-area films. In order to control the structure and properties of these materials at the monolayer level, their nucleation, growth and interfacing needs to be understood to a level of unprecedented detail compared to existing thin film or bulk materials. Chemical vapor deposition (CVD) has emerged as the most versatile and promising technique to develop graphene and 2D material films into industrial device materials and this Perspective outlines recent progress, trends, and emerging CVD processing pathways. A key focus is the emerging understanding of the underlying growth mechanisms, in particular on the role of the required catalytic growth substrate, which brings together the latest progress in the fields of heterogeneous catalysis and classic crystal/thin-film growth.

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