Controllable Growth of Vertical Heterostructure GaTexSe1–x/Si by Molecular Beam Epitaxy

标题
Controllable Growth of Vertical Heterostructure GaTexSe1–x/Si by Molecular Beam Epitaxy
作者
关键词
-
出版物
ACS Nano
Volume 9, Issue 8, Pages 8592-8598
出版商
American Chemical Society (ACS)
发表日期
2015-08-03
DOI
10.1021/acsnano.5b03796

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