MoS2 Quantum Dot: Effects of Passivation, Additional Layer, and h-BN Substrate on Its Stability and Electronic Properties

标题
MoS2 Quantum Dot: Effects of Passivation, Additional Layer, and h-BN Substrate on Its Stability and Electronic Properties
作者
关键词
-
出版物
Journal of Physical Chemistry C
Volume 119, Issue 3, Pages 1565-1574
出版商
American Chemical Society (ACS)
发表日期
2014-12-24
DOI
10.1021/jp510598x

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