4.6 Article

Charge Transport in Thick Reduced Graphene Oxide Film

期刊

JOURNAL OF PHYSICAL CHEMISTRY C
卷 119, 期 51, 页码 28685-28690

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acs.jpcc.5b10734

关键词

-

资金

  1. Fusion Research Program for Green Technologies through the National Research Foundation of Korea (NRF) - Ministry of Science, ICT & Future Planning [2012M3C1A1048861]

向作者/读者索取更多资源

We have investigated temperature-dependent charge transport behavior in thick reduced graphene oxide (RGO) film. Our results show that charges transport through two parallel percolating conducting pathways. One contains large disordered regions as one of its constituents, so its conductance is determined dominantly by variable range hopping (VRH). The other is composed of small and medium disordered regions and crystalline sp(2) domains, so its conductance is determined by a serial connection of quantum tunneling and thermal activation. The more oxygen functional groups are removed from GO film upon progressive reduction, the lower the potential barriers between the crystalline sp(2) domains and disordered regions become. The contribution of thermal activation to total conductance does not appear evidently for highly reduced GO film having low potential barriers, but thermal activation causes the conductance of moderately reduced film to change continuously, even at low temperatures where the VRH is almost frozen out.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.6
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据