期刊
DIAMOND AND RELATED MATERIALS
卷 17, 期 7-10, 页码 1055-1061出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.diamond.2008.01.050
关键词
diamond growth and characterization; enhanced growth; plasma CVD reactor; millimeter wave
The additions of argon and oxygen to H-2-CH4 feed gas and high-electron-density plasma generated by the millimeter-wave power were used to deposit microcrystalline diamond films having high quality and high growth rate simultaneously. Microcrystalline diamond films were grown on silicon substrates with 60-90 mm diameter in the millimeter-wave plasma-assisted CVD reactor based on 10 kW gyrotron operating at a frequency of 30 GHz. The growth process and morphology of diamond films at wide variation of parameters (gas pressure, substrate temperature, microwave power, argon and oxygen concentrations in gas mixtures Ar-H-2-CH4 and Ar-H-2-CH4-O-2) are investigated. For understanding of growth conditions the investigations of the plasma parameters (electron density and gas temperature) in novel CVD reactor are presented. (C) 2008 Elsevier B.V. All rights reserved.
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