期刊
DIAMOND AND RELATED MATERIALS
卷 17, 期 4-5, 页码 646-649出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.diamond.2007.08.018
关键词
DLC film; pulsed discharge plasma CVD; microstructure; optical band gap
DLC films were deposited on silicon and quartz glass substrates by pulsed discharge plasma chemical vapor deposition (CVD), where the plasma was generated by pulsed DC discharge in H-2-CH4 gas mixture at about 90 Torr in pressure, and the substrates were located near the plasma. The repetition frequency and duty ratio of the pulse were 800 Hz and 20%, respectively. When CH4/(CH4+H-2) ratio, i.e. methane concentration (Cm), increased from 3 to 40%, C-2 species in the plasma was increased, and corresponding to the increase of C-2, deposition rate of the film was increased from about 0.2 to 2.4 mu m/h. The absorption peaks of sp(3)C-H and (SPC)-C-2-H structures were observed in the FT-IR spectra, and the peak of (SPC)-C-2-H structure was increased with increasing Cm, showing that sp(2) to sp(3) bonding ratio was increased when Cm was increased. Corresponding to these structural changes due to the increase of Cm, optical band gap (Eg) was decreased from 3 to 0.5 eV continuously when Cm was increased from 3 to 40%. (C) 2007 Elsevier B.V. All rights reserved.
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