期刊
ACS NANO
卷 9, 期 8, 页码 8599-8608出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.5b03801
关键词
graphene; defects divacancy; TEM; aberration correction; DFT
类别
资金
- Royal Society
- National Research Foundation of Korea (NRF) - Korea government (RIAM) [2010-0012670]
- National Research Foundation of Korea [2010-0012670] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- Engineering and Physical Sciences Research Council [EP/K032518/1] Funding Source: researchfish
- EPSRC [EP/K032518/1] Funding Source: UKRI
Vacancy defects play an important role in influencing the properties of graphene, and understanding their detailed atomic structure is crucial for developing accurate models to predict their impact. Divacancies (DVs) are one of the most common defects in graphene and can take three different structural forms through various sequences of bond rotations to minimize the energy. Using aberration-corrected transmission electron microscopy with monochromation of the electron source, we resolve the position of C atoms in graphene and measure the C-C bond lengths within the three DVs, enabling a map of bond strain to be generated. We show that bond rotations reduce the maximum single bond strain reached within a DV and help distribute the strain over a larger number of bonds to minimize the peak magnitude.
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