期刊
CURRENT NANOSCIENCE
卷 8, 期 2, 页码 226-231出版社
BENTHAM SCIENCE PUBL LTD
DOI: 10.2174/157341312800167560
关键词
Silicon carbide nanowires; photoluminescence; microstructure; electron microscopy
类别
资金
- National Nature Science Foundation of the People's Republic of China [50902124]
- Zhejiang Provincial Natural Science Foundation [Y4090468]
- National Basic Research Program of China (973 Program) [2010CB933501]
- Innovative Youth Team of Natural Science Foundation of Zhejiang Province [R4090058]
Hierarchical single-crystalline beta-SiC nanowires were synthesized by simply heating carbonaceous silica xerogel. A fairly high density of stacking faults was observed perpendicular to [111] growth direction of the hierarchical nanowires. A possible vapor-solid growth mechanism for the hierarchical nanowires was discussed. The photoluminescence spectrum of hierarchical SiC nanowires at room temperature shows two emission peaks at 406 nm and 432 nm. The blue emission at 432 nm may be related to 3C-SiC, while the emission peak at 406 nm may be attributed to 6H-SiC segments formed by stacking faults in 3C-SiC nanowire matrix.
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