Atomic layer deposited HfO2 based metal insulator semiconductor GaN ultraviolet photodetectors

标题
Atomic layer deposited HfO2 based metal insulator semiconductor GaN ultraviolet photodetectors
作者
关键词
-
出版物
CURRENT APPLIED PHYSICS
Volume 14, Issue 12, Pages 1703-1706
出版商
Elsevier BV
发表日期
2014-10-14
DOI
10.1016/j.cap.2014.10.001

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