Electrical and dielectric properties of Al/HfO2/p-Si MOS device at high temperatures

标题
Electrical and dielectric properties of Al/HfO2/p-Si MOS device at high temperatures
作者
关键词
-
出版物
CURRENT APPLIED PHYSICS
Volume 13, Issue 8, Pages 1819-1825
出版商
Elsevier BV
发表日期
2013-07-23
DOI
10.1016/j.cap.2013.07.004

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