期刊
CURRENT APPLIED PHYSICS
卷 11, 期 3, 页码 S296-S300出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.cap.2011.03.051
关键词
First-principles calculations; Vacancy defects; Indium oxide
First-principles density functional theory is employed to study the electrical behavior of oxygen and indium vacancies in indium oxide (In(2)O(3)). The oxygen vacancy is found to be a double donor. The indium vacancy is a triple acceptor, which >can be a compensation center in n-type In(2)O(3), leading to n-type carrier reduction. However, its high formation energy under p-type conditions makes it unlikely to be a source of p-type carriers by itself. (C) 2011 Elsevier B.V. All rights reserved.
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