期刊
CURRENT APPLIED PHYSICS
卷 10, 期 4, 页码 E161-E165出版社
ELSEVIER
DOI: 10.1016/j.cap.2010.03.016
关键词
OTFT; Ink-jet printing; PPE-pentacene; Hysteresis; Gate bias stress
We studied the fabrication of stable ink-jet printed organic thin-film transistors (OTFTs) with printed source/drain electrodes. On the top of printed Ag source/drain electrodes, 6, 13-bis(4-pentylphenylethynyl) pentacene was ink-jet printed as an active semiconductor. The printed OTFT exhibited the field-effect mobility of 0.042 cm(2)/V, an on/off current ratio of 10(6), a threshold voltage of 2.9 V and the gate voltage swing of 0.6 V/dec. The printed OTFT shows negligible hysteresis in air and stable performance under gate bias stress. (C) 2010 Elsevier B.V. All rights reserved.
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