Growth of CdS and CdTe films by close space vapour sublimation by using SiC resistive elements

The growth of CdTe/CdS films by a close space sublimation (CSS) technique using SiC electrical heating elements is presented. The structure, composition and optical properties of the films are studied as a function of different growth parameters and compared with previous results reported in the literature from films grown by CSS using halogen lamps. The homogeneity and composition of the films are analyzed by scanning electron microscopy, grazing angle (0.5 degrees) X-Ray diffraction and energy dispersive analysis. Electron beam induced current is also used for the preliminary analysis of the CdTe/CdS junctions.