期刊
CRYSTENGCOMM
卷 14, 期 11, 页码 3907-3914出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c2ce25220a
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资金
- Department of Science and Technology (DST), Govt. of India
- DST-Nanomission [SR/NM/NS-77/2008]
- UGC, Govt. of India
Vertically aligned indium doped zinc oxide (IZO) nanorods (NRs) have been grown without any external catalyst on an indium tin oxide (ITO) coated glass substrate by radio frequency magnetron sputtering. Wurtzite IZO NRs distributed homogeneously on the substrate with a preferential orientation along the (002) crystallographic plane. The indium atoms are found to be spatially incorporated into the ZnO lattice along the axial direction by the migration of adatoms from the ITO coated glass substrate at the growth temperature of 550 degrees C. The doping concentration and mobility of the NRs are determined to be 1.3 x 10(17) cm(-3) and 68 cm(2) V-1 s(-1) by the Raman line shape analysis of the longitudinal optical phonon-plasmon coupled mode. The maximum optical transmittance of 83% in the visible region could be an ideal system for nanotextured anode and photovoltaic applications.
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