Heteroepitaxy of Ga2(1-x)In2xO3layers by MOVPE with two different oxygen sources

Crystal orientation of β-Ga2O3 thin films formed on c-plane and a-plane sapphire substrate

(2012) Shinji Nakagomi et al.   JOURNAL OF CRYSTAL GROWTH

Electrical properties of β-Ga2O3 single crystals grown by the Czochralski method

(2011) K. Irmscher et al.   JOURNAL OF APPLIED PHYSICS

Melt growth, characterization and properties of bulk In2O3 single crystals

(2011) Z. Galazka et al.   JOURNAL OF CRYSTAL GROWTH

Structural and optical properties of Ga2O3:In films deposited on MgO (100) substrates by MOCVD

(2011) Lingyi Kong et al.   JOURNAL OF SOLID STATE CHEMISTRY

Experimental electronic structure of In2O3and Ga2O3

(2011) Christoph Janowitz et al.   NEW JOURNAL OF PHYSICS

Oxygen vacancies and donor impurities in β-Ga2O3

(2010) J. B. Varley et al.   APPLIED PHYSICS LETTERS

Preparation and characterization of Ga2xIn2(1−x)O3 films deposited on ZrO2 (100) substrates by MOCVD

(2010) Lingyi Kong et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Transparent semiconducting oxides: materials and devices

(2010) Marius Grundmann et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Nature of the Band Gap ofIn2O3Revealed by First-Principles Calculations and X-Ray Spectroscopy

(2008) Aron Walsh et al.   PHYSICAL REVIEW LETTERS