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Emerging nanoscale memory and logic devices: A critical assessment

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COMPUTER
卷 41, 期 5, 页码 28-+

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IEEE COMPUTER SOC
DOI: 10.1109/MC.2008.154

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A natural question for the semiconductor industry is how to exploit nanoscale materials and structures to develop a new, but CMOS-compatible, information-processing technology. During the past two years, the ITRS Emerging Research Devices Working Group has explored the questions of whether nanoscale technology can eventually replace CMOS with a highly scalable, high-performance, low-power binary Boolean logic switch or provide a memory or storage technology capable of scaling either volatile or nonvolatile memory technology beyond 22 nm.

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