4.1 Article

Application of the quantum Hall effect to resistance metrology

期刊

COMPTES RENDUS PHYSIQUE
卷 12, 期 4, 页码 347-368

出版社

ELSEVIER FRANCE-EDITIONS SCIENTIFIQUES MEDICALES ELSEVIER
DOI: 10.1016/j.crhy.2011.04.008

关键词

Fundamental metrology; Electrical metrology; Quantum Hall effect; Semiconductors; Graphene; Fundamental constants of physics

向作者/读者索取更多资源

The quantum Hall effect (QHE) discovery has revolutionized metrology by providing with a representation of the unit of resistance, R-K, that can be reproduced within a relative uncertainty of one part in 10(9) and is theoretically only linked to Planck's constant h and the electron charge e. This breakthrough also results from the development of resistance comparison bridges using cryogenic current comparator (CCC). The QHE experimental know-how now allows the realization of perfectly quantized Quantum Hall Array Resistance Standards (QHARS) by combining a large number of single Hall bars. In the context of an evolution of the Systeme International (SI) of units by fixing some fundamental constants of physics, the determination of the von Klitzing constant R-K through the use of the so-called Thompson-Lampard calculable capacitor and the realization of refined universality tests of the QHE are of prime importance. Finally, the fascinating graphene material might be a new turning point in resistance metrology. (C) 2011 Published by Elsevier Masson SAS on behalf of Academie des sciences.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.1
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据