期刊
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
卷 31, 期 2, 页码 175-181出版社
JOURNAL MATER SCI TECHNOL
DOI: 10.1016/j.jmst.2014.11.009
关键词
Ga-doped ZnO film; Crystalline size; Texture coefficient; Photoelectric properties; Optical band gap
资金
- National Natural Science Foundation of China [51071038]
- Sichuan Province Science Foundation [2010JQ0002]
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, China [20131309]
C-axis oriented Ga-doped ZnO (GZO) films with various thicknesses were deposited on glass substrate by radio frequency (RF) magnetron sputtering. The dependence of crystal structure, electrical, and optical properties of the GZO films on crystalline size were systematically studied. The results showed that the texture coefficient of (002) peak (TC(002)) decreases with increasing crystalline size. The Hall mobility mu was reciprocal to electron effective mass and the fitted relaxation time tau was 0.11 +/- 0.01 mu s. With the increase of average crystalline size, the resistivity increased slightly, which is caused by the competition of (002) and (101) plane, introducing in some defects and leading to carrier density reduction. The optical band gap was in the range from 3.454 to 3.319 eV with increasing crystalline size from 26.96 to 30.88 nm, showing a negative relationship. The dependence of optical band gap (E-g(op)) on the crystalline size (R) can be qualitatively explained by a quantum confinement effect. The relationship between E-g(op) and R of GZO films suggests that tuning up optical properties for desired applications can be achieved by controlling the crystalline size.
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