期刊
ACS NANO
卷 9, 期 9, 页码 8851-8858出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.5b02356
关键词
graphene; photodetector; carrier multiplication; vertical homojunction; photovoltaics
类别
资金
- MOST [2013CB934600, 2013CB932602, 2012CB921300, 2014CB920900]
- NSFC [11274014, 11234001, 11274015]
- Program for New Century Excellent Talents in University of China [NCET-12-0002]
- Recruitment Program of Global Experts
- ERC
Graphene exhibits exciting potentials for high-speed wideband photodetection and high quantum efficiency solar energy harvest because of its broad spectral absorption, fast photoelectric response, and potential carrier multiplication. Although photocurrent can be generated near a metal-graphene interface in lateral devices, the photoactive area is usually limited to a tiny one-dimensional line-like interface region. Here, we report photoelectric devices based on vertical graphene two-dimensional homojunction, which is fabricated via vertically stacking four graphene monolayers with asymmetric metal contacts. The devices show excellent photovoltaic output with excitation wavelength ranging from visible light to mid-infrared. The wavelength dependence of the internal quantum efficiency gives direct evidence of the carrier multiplication effect in graphene. The simple fabrication process, easy scale-up, large photoresponsive active area, and broadband response of the vertical graphene device are very promising for practical applications in optoelectronics and photovoltaics.
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