期刊
ACS NANO
卷 9, 期 7, 页码 7207-7214出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.5b02020
关键词
N-doped graphene; Shubnikov-de Haas oscillation; magnetoresistance; two-dimensional transport; substitutional doping
类别
资金
- Beijing Institute of Technology Research Fund Program for Young Scholars
- National Plan for Science and Technology of King Abdulaziz City for Science and Technology [NPST 1598-02, NPST 1466-02]
- Saudi Aramco [6600028398]
N-doped graphene displays many interesting properties compared with pristine graphene, which makes it a potential candidate in many applications. Here, we report that the Shubnikov- de Haas (SdH) oscillation effect in graphene can be enhanced by N-doping. We show that the amplitude of the SdH oscillation increases with N-doping and reaches around 5k Omega under a field of 14T at 10 K for highly N-doped graphene, which is over 1 order of magnitude larger than the value found for pristine graphene devices with the same geometry. Moreover, in contrast to the well-established standard Lifshitz-Kosevich theory, the amplitude of the SdH oscillation decreases linearly with increasing temperature and persists up to a temperature of 150 K. Our results also show that the magnetoresistance (MR) in N-doped graphene increases with increasing temperature. Our results may be useful for the application of N-doped graphene in magnetic devices.
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